Si4840/44-A10
1. Electrical Specifications
Table 1. Recommended Operating Conditions 1,2
Parameter
Supply Voltage 3
Power Supply Powerup Rise Time
Symbol
V DD
V DDRISE
Test Condition
Min
2
10
Typ
Max
3.6
Unit
V
μs
Notes:
1. Typical values in the data sheet apply at V DD = 3.3 V and 25 °C unless otherwise stated.
2. All minimum and maximum specifications in the data sheet apply across the recommended operating conditions for
minimum V DD = 2.7 V.
3. Operation at minimum V DD is guaranteed by characterization when V DD voltage is ramped down to 2.0 V. Part
initialization may become unresponsive below 2.3 V.
Table 2. DC Characteristics
(V DD = 2.7 to 3.6 V, TA = –15 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
FM Mode
Supply Current 1
I FM
21.0
mA
Supply
Current 2
I FM
Low SNR level
21.5
mA
AM/SW Mode
Supply Current 1
I AM
17.0
mA
Supplies and Interface
V DD Powerdown
Current
I DDPD
10
μA
Notes:
1. Specifications are guaranteed by characterization.
2. LNA is automatically switched to higher current mode for optimum sensitivity in weak signal conditions.
4
Rev.1.0
相关PDF资料
SI4848DY-T1-GE3 MOSFET N-CH 150V 8-SOIC
SI4866BDY-T1-E3 MOSFET N-CH 12V 21.5A 8-SOIC
SI4866DY-T1-GE3 MOSFET N-CH 12V 11A 8-SOIC
SI4884BDY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4886DY-T1-GE3 MOSFET N-CH 30V 9.5A 8-SOIC
SI4890BDY-T1-E3 MOSFET N-CH 30V 16A 8-SOIC
SI4890DY-T1-GE3 MOSFET N-CH 30V 11A 8-SOIC
SI4894BDY-T1-GE3 MOSFET N-CH 30V 8.9A 8-SOIC
相关代理商/技术参数
Si4844-A10-GUR 功能描述:射频接收器 AM/FM/SW RX, 24p SSOP RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
Si4844-B-DEMO 制造商:Silicon Laboratories Inc 功能描述:RF Development Tools Consumer Electronics AM/FM/SW EVB
Si4844-DEMO 功能描述:射频开发工具 Si4844 Demo and Eval Board RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V
SI4845DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET with Schottky Diode
SI4845DY-T1-E3 功能描述:MOSFET 20V 2.7A 2.75W 210mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4848DY 功能描述:MOSFET 150V 3.7A 3W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4848DY_06 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) MOSFET
SI4848DY-E3 功能描述:MOSFET 150V 3.7A 3W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube